Cite
HARVARD Citation
Hite, J. et al. (2020). (Invited) GaN Homoepitaxial Growth and Substrate-Dependent Effects for Vertical Power Devices. ECS transactions. pp. 63-67. [Online].
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Hite, J. et al. (2020). (Invited) GaN Homoepitaxial Growth and Substrate-Dependent Effects for Vertical Power Devices. ECS transactions. pp. 63-67. [Online].