AlGaN/GaN High Electron Mobility Transistors for Cardiovascular Disease (CVD) Marker Detection. (11th September 2015)

• Record Type: Journal Article
• Authors: Chu, Chia-Ho; Sarangadharan, Indu; Regmi, Abiral; Chen, Yi-Ting; Wang, Yu-Lin
• Is Part Of: ECS transactions. Volume 69:Number 13(2015)
• Page Start: 11
• Page End: 14
• Publication Date: 2015-09-11
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/06913.0011ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : According to the statistics published by the World Health Organization (WHO) in 2011, cardiovascular disease (CVD) is the leading cause of death globally. Recent studies suggest that the level of C-reactive protein can be an important indicator of a person's risk for cardiovascular disease. In this study, we detect low concentration of C-reactive protein (1 fM) electronically by immobilizing CRP-specific aptamer on the AlGaN/GaN HEMT based biosensor, showing that this technique is promising for biosensor applications.