(Invited) Novel Implantation Processing and Characterization for Scalable GaN Power Devices. (17th August 2017)

• Record Type: Journal Article
• Authors: Goorsky, Mark S.; Bai, Tingyu; Li, Chao; Tadjer, Marko J.; Hobart, Karl D; Anderson, Travis J; Hite, Jennifer K; Feigelson, Boris
• Is Part Of: ECS transactions. Volume 80:Number 7(2017)
• Page Start: 251
• Page End: 260
• Publication Date: 2017-08-17
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/08007.0251ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : Novel ion implantation processing enables p-type doping for high performance vertical GaN p-n power devices. Multicycle Rapid Thermal Annealing with an N2 ambient at 200 psi, pulsed annealing up to ~1400 °C, and an appropriate dielectric encapsulant, is utilized to improve activation efficiency and, ultimately, p-n junction performance through selective ion implantation and processing optimization. Here, the focus is on analysis of MRTA activated, Mg+ implantation into GaN deposited on sapphire substrates. The link between defects and implant activation will be assessed through the use of novel structural materials characterization techniques. X-ray based reciprocal space mapping as a function of the implant and subsequent annealing will be shown to correlate strain and defect formation with dopant activation. Electron microscopy defect analysis is demonstrated to provide localized strain measurements after annealing. Understanding the evolution of implant-induced point defect concentrations and dislocation formation, will lead to effective p-type dopant activation and high device performance.