Gate Stack Engineering in 2D Semiconductor FETs for Electronic Applications. (20th July 2018)

• Record Type: Journal Article
• Authors: Zhu, Hao; Xu, Jing; He, Longfei; Nie, Xinran; Chen, Lin; Sun, Qingqing; Zhang, David Wei
• Is Part Of: ECS transactions. Volume 86:Number 9(2018)
• Page Start: 51
• Page End: 55
• Publication Date: 2018-07-20
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/08609.0051ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : In this work, we present an experimental study on the gate stack engineering in transition metal dichalcogenide-based field-effect transistor. The electrical performance has been significantly improved due to enhanced gate control through the effective structure engineering. The interesting photoresponsivity and low-frequency noise characteristics have been observed which make it very attractive for photodetector and various sensing applications.