A SPICE Compatible Model of Graphene/Silicon Schottky Barrier Photodiode. (7th July 2017)

• Record Type: Journal Article
• Authors: Srivastava, Ashok; Chen, Xinlu; Pradhan, Aswini K
• Is Part Of: ECS transactions. Volume 77:Number 11(2017)
• Page Start: 637
• Page End: 644
• Publication Date: 2017-07-07
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/07711.0637ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : In this work, a theoretical analysis is presented for the photo-response studies of graphene/silicon Schottky barrier type diodes. A computed 238.8 W -1 photocurrent to dark current ratio normalized by the power source (633nm wavelength and 10mW laser) is obtained. An equivalent circuit model of the graphene/silicon Schottky barrier diode compatible with SPICE simulation is developed and simulated photo-response characteristics are presented using analog behavior modeling which are in close agreement with the theoretical analysis.