(Invited) Enabling SiC Yield and Reliability through Epitaxy and Characterization. (21st September 2015)

• Record Type: Journal Article
• Authors: Das, Hrishikesh; Sunkari, Swapna; Domeij, Martin; Konstantinov, Andrei; Allerstam, Fredrik; Neyer, Thomas
• Is Part Of: ECS transactions. Volume 69:Number 11(2015)
• Page Start: 29
• Page End: 32
• Publication Date: 2015-09-21
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/06911.0029ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : Reliability and cost are the major factors facing large scale adoption of SiC power devices. The push to reduce costs with 150mm diameter wafers comes with lower crystal quality and higher defects, thus prompting reliability concerns. In this work we present ways for comprehensive detection and screening of bipolar degradation causing defects and other crystal defects to alleviate reliability concerns.