Origin of PL emission at 0.797 eV in near stoichiometric spray deposited CZTS thin films. (March 2020)

• Record Type: Journal Article
• Authors: Poornima, N.; Rajeshmon, V.G.; Sudha Kartha, C.; Vijayakumar, K.P.
• Is Part Of: Journal of physics. Volume 1461(2020)
• Publication Date: 2020-03
• Subjects: Physics -- Congresses; 530.5
• DOI: 10.1088/1742-6596/1461/1/012113
• Languages: English
• ISSNs: 1742-6588

Abstract

Abstract: Photoluminescence (PL) spectroscopy has been employed for analyzing defect levels in near stoichiometric Cu2ZnSnS4 (CZTS) thin films deposited using chemical spray pyrolysis (CSP) technique. An emission at 0.797 eV could be recorded at 15 K from the near stoichiometric CZTS thin films. This emission was persistent up to room temperature and could be identified as "donor to acceptor pair (DAP)" transition and also bears close connection with concentration of copper. Using temperature as well as excitation power dependent PL measurements and X-ray photoelectron spectroscopy (XPS) depth profile analysis, the emission at 0.797 eV could be identified as arising from transition between donor level (due to OSn defect) and acceptor level (created by Cuzn defect).