(Invited) Excellent Wetting Behavior of Yttria on 2D Materials. (8th September 2015)

• Record Type: Journal Article
• Authors: Addou, Rafik; Batzill, Matthias; Wallace, Robert M
• Is Part Of: ECS transactions. Volume 69:Number 5(2015)
• Page Start: 325
• Page End: 336
• Publication Date: 2015-09-08
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/06905.0325ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : The integration of two-dimensional materials into nanoelectronic devices requires contact with high-κ dielectric. For better performance, it is indispensable to grow uniform and conformal dielectric materials. In this paper, we show the excellent wetting behavior of yttrium oxide (yttria, Y2 O3 ) thin films on graphene using several interface and surface science techniques. The uniformity of the Y2 O3 was characterized using scanning tunneling microscopy, atomic force microscopy, transmission electron microscopy, and low energy ion scattering. Photoemission was used to investigate the surface chemistry and the charge doping level of graphene by evaluating the C 1 s core level. Furthermore, the favorable wetting behavior of yttria is exploited as an effective buffer layer for atomic layer deposition of Al2 O3 on non-functionalized graphene surface.