(Invited) Computer Simulation of Intrinsic Point Defect Distribution Valid for All Pulling Conditions in Large-Diameter Czochralski Si Crystal Growth. (23rd July 2018)

• Record Type: Journal Article
• Authors: Sueoka, Koji; Mukaiyama, Yuji; Kobayashi, Koji; Fukuda, Hiroaki; Yamaoka, Shunta; Maeda, Susumu; Iizuka, Masaya; Mamedov, Vasif M
• Is Part Of: ECS transactions. Volume 86:Number 10(2018)
• Page Start: 3
• Page End: 24
• Publication Date: 2018-07-23
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/08610.0003ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : To explain and engineer intrinsic point defect behavior in large-diameter single crystal Si grown using the Czochralski (CZ) method, a unified model valid for all pulling processes, crystal resistivities, and electrically inactive impurity concentrations that couples the effects of thermal stress, dopants, and interstitial oxygen (Oi ) atoms is needed. We determined the thermal equilibrium concentration of intrinsic point defects (vacancy V and self-interstitial Si I ) in CZ-Si crystal as functions of thermal stresses, type and concentration of dopant, and the concentration of Oi atoms. Global heat transfer during crystal growth in a puller was simulated using STR Group's CGSim software package. A visual distribution of V and I concentrations inside a growing doped and thermally stressed Si ingot is very useful for improving the quality of large-diameter CZ-Si crystals.