Plasma-enhanced atomic layer deposition of GaP/GaN digital alloys. Issue 1 (March 2021)

• Record Type: Journal Article
• Authors: Uvarov, A V; Gudovskikh, A S; Baranov, A I; Morozov, I A; Kudryashov, D A
• Is Part Of: Journal of physics. Volume 1851:Issue 1(2021)
• Publication Date: 2021-03
• Subjects: Physics -- Congresses; 530.5
• DOI: 10.1088/1742-6596/1851/1/012008
• Languages: English
• ISSNs: 1742-6588

Abstract

Abstract: This article is concerned with plasma-enhanced atomic layer deposition of GaPN in the form of a GaP/GaN digital alloy at 380°C on a silicon substrate. It was found that the GaP/GaN digital alloy has a uniform structure without significant mechanical stresses and defects at the interface with the substrate. EDX and Raman scattering study confirmed deposition of a monolithic GaPN crystalline material with a total nitrogen content of 7.8%.