Cite
HARVARD Citation
Chen, L. et al. (2023). Gaseous Catalyst Assisted Growth of Graphene on Silicon Carbide for Quantum Hall Resistance Standard Device. Advanced materials technologies. 8 (2), p. n/a. [Online].
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Chen, L. et al. (2023). Gaseous Catalyst Assisted Growth of Graphene on Silicon Carbide for Quantum Hall Resistance Standard Device. Advanced materials technologies. 8 (2), p. n/a. [Online].