Electronic and thermal transport properties of the metallic antiferromagnet MnSn2. Issue 3 (5th January 2023)

• Record Type: Journal Article
• Authors: Yang, Mingge; Wang, Ziyue; Li, Jiangxiao; Hong, Bin; Du, Yinchang; Wei, Wensen; Wang, Ruilong; Liu, Fengguang; Zu, Lin
• Is Part Of: Physical chemistry chemical physics. Volume 25:Issue 3(2023)
• Page Start: 2462
• Page End: 2467
• Publication Date: 2023-01-05
• Subjects: Chemistry, Physical and theoretical -- Periodicals; 541.3
• DOI: 10.1039/d2cp04281a
• Languages: English
• ISSNs: 1463-9076

Abstract

Abstract : We report the structure, magnetic and electrical/thermal transport properties of the antiferromagnet MnSn2 . Abstract : We report the structure, magnetic and electrical/thermal transport properties of the antiferromagnet MnSn2 . Importantly, the existence of the two antiferromagnetic states below T N2 (∼320 K) is confirmed by magnetism and electrical transport measurements. An unsaturated positive magnetoresistance up to 150% at ∼9 T was observed at 5 K, whereas the magnetoresistance becomes negative in the whole range at high temperatures ( T > 74 K). Systematic investigations of the Hall transport and thermoelectric properties reveal that the hole-type carriers are the majority carriers in MnSn2 . The kink around 320 K in the Seebeck coefficient originates from the effect of the antiferromagnetic phase on the band structure, while the pronounced peak around 231 K is attributed to the phonon-drag effect. The results suggest that the spin arrangement plays a vital role in the magnetic, electrical, and thermal transport properties in MnSn2 .