Cite
HARVARD Citation
Fricker, D. et al. (2023). Effect of surface gallium termination on the formation and emission energy of an InGaAs wetting layer during the growth of InGaAs quantum dots by droplet epitaxy. Nanotechnology. p. . [Online].
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Fricker, D. et al. (2023). Effect of surface gallium termination on the formation and emission energy of an InGaAs wetting layer during the growth of InGaAs quantum dots by droplet epitaxy. Nanotechnology. p. . [Online].