A self-powered and broadband UV PIN photodiode employing a NiOx layer and a β-Ga2O3 heterojunction. (9th February 2023)

• Record Type: Journal Article
• Authors: Vasquez, Jose Manuel Taboada; Ashai, Aasim; Lu, Yi; Khandelwal, Vishal; Rajbhar, Manoj; Kumar, Mritunjay; Li, Xiaohang; Sarkar, Biplab
• Is Part Of: Journal of physics. Volume 56:Number 6(2023)
• Publication Date: 2023-02-09
• Subjects: PIN photodiode -- β-Ga2O3 -- broadband photodetector -- detectivity -- TCAD; Physics -- Periodicals; 530
• DOI: 10.1088/1361-6463/acaed7
• Languages: English
• ISSNs: 0022-3727

Abstract

Abstract: Crucial commercial and space applications require the detection of broadband ultraviolet (UV) rays spanning from UV-A to UV-C. In this study, the authors demonstrate a broadband UV photodetector employing a p-type NiOx layer and an n-type β -Ga2 O3 heterostructure in PIN configuration for the first time. Simulations are conducted to optimize the doping concentration and thickness of the NiOx layer, ensuring that (a) a reasonable depletion width is maintained within the NiOx layer for UV-A and UV-B light absorption; (b) anode ohmic contacts are formed on the nondepleted NiOx film, and (c) >70% of the UV-C light is absorbed by β -Ga2 O3 . The optimized NiOx / β -Ga2 O3 PIN photodiode exhibits good responsivity to incident light wavelengths in the UV-A, UV-B, and UV-C regions. While the NiOx layer is considered to be responsible for providing good photoresponsivity in the UV-A and UV-B regions, a highly resistive (near-intrinsic) β -Ga2 O3 layer is required for the absorption of incident UV-C light. A record detectivity of >10 11 cm Hz 0.5 W −1 for the UV-B and UV-C regions and >10 10 cm Hz 0.5 W −1 for the UV-A region is observed in the NiOx / β -Ga2 O3 heterostructure PIN photodiode during the self-powered operation. The results presented in this study are promising and instigate device design strategies for (ultra)wide bandgap semiconductor-based broadband UV PIN photodetectors.