Electrical Transport Properties of Layered Black Phosphorus grown by Chemical Vapor Transport. Issue 1 (17th November 2022)

• Record Type: Journal Article
• Authors: Zdeg, I.; Al‐Shami, A.; Tiouichi, G.; Absike, H.; Chaudhary, V.; Neugebauer, P.; Nouneh, K.; Belhboub, A.; Mounkachi, O.; El Fatimy, A.
• Is Part Of: Crystal research and technology. Volume 58:Issue 1(2023)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2022-11-17
• Subjects: black phosphorus -- chemical vapor transport -- defects -- mobility; Crystallography -- Periodicals; 548
• DOI: 10.1002/crat.202200164
• Languages: English
• ISSNs: 0232-1300

Abstract

Abstract: This work investigates the transport properties of layered black phosphorus (BP) grown by the chemical vapor transport (CVT). The electrical measurements are carried out at a temperature ranging from 300 to 2 K and a magnetic field up to 16 Tesla. The CVT‐grown BP exhibits p‐type conduction with an acceptor's 14–1.2 meV activation energy. The concentration of ionized acceptors is 1.2 × 10 17 c m − 3 $1.2 \times {10^{17}}{\rm{c}}{{\rm{m}}^{ - 3}}$ Moreover, the Hall mobility is found to be 138 cm 2 V −1 s −1 and 4 × 10 4 cm 2 V −1 s −1, respectively, at room temperature and 2 K. This work reveals the potential of CVT synthesis as a simple, nontoxic, and cheap technique to make high‐quality BP crystals with high carrier mobility ready as a solid foundation for BP single‐crystal application. Abstract : High mobility layered black phosphorus (BP) is successfully prepared via the chemical vapor transport (CVT) technique. Hall mobility reaches 4 × 10 4 cm 2 V −1 s −1 at room temperature. Activation energy and defects density of the CVT samples are investigated and compared to the state of art synthesis methods.