Cite
HARVARD Citation
Lei, Y. et al. (2023). Single-event burnout hardening evaluation with current and electric field redistribution of high voltage LDMOS transistors based on TCAD Simulations. Microelectronics journal. p. . [Online].
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Lei, Y. et al. (2023). Single-event burnout hardening evaluation with current and electric field redistribution of high voltage LDMOS transistors based on TCAD Simulations. Microelectronics journal. p. . [Online].