A Switchable One‐Compound Diode. Issue 2 (24th November 2022)

• Record Type: Journal Article
• Authors: Vogel, Anna; Rabenbauer, Alfred; Deng, Philipp; Steib, Ruben; Böger, Thorben; Zeier, Wolfgang G.; Siegel, Renée; Senker, Jürgen; Daisenberger, Dominik; Nisi, Katharina; Holleitner, Alexander W.; Venturini, Janio; Nilges, Tom
• Is Part Of: Advanced materials. Volume 35:Issue 2(2023)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2022-11-24
• Subjects: coinage metals -- diodes -- ion conductors -- pnp‐switches -- polymorphism; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.202208698
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract: A diode requires the combination of p‐ and n‐type semiconductors or at least the defined formation of such areas within a given compound. This is a prerequisite for any IT application, energy conversion technology, and electronic semiconductor devices. Since the discovery of the pnp‐switchable compound Ag10 Te4 Br3 in 2009, it is in principle possible to fabricate a diode from a single material without adjusting the semiconduction type by a defined doping level. Often a structural phase transition accompanied by a dynamic change of charge carriers or a charge density wave within certain substructures are responsible for this effect. Unfortunately, the high pnp‐switching temperature between 364 and 580 K hinders the application of this phenomenon in convenient devices. This effect is far removed from a suitable operation temperature at ambient conditions. Ag18 Cu3 Te11 Cl3 is a room temperature pnp‐switching material and the first single‐material position‐independent diode. It shows the highest ever reported Seebeck coefficient drop that takes place within a few Kelvin. Combined with its low thermal conductivity, it offers great application potential within an accessible and applicable temperature window. Ag18 Cu3 Te11 Cl3 and pnp‐switching materials have the potential for applications and processes where diodes, transistors, or any defined charge separation with junction formation are utilized. Abstract : With Ag18 Cu3 Te11 Cl3, a material for the first one‐compound diode is discovered. A temperature‐gradient driven pn‐junction is realized in a single crystal where p‐ and n‐type conduction is accessed without external doping. The transition close to room temperature enables a variety of semiconductor applications.