(Invited) Integration of an Epitaxial-Base-Link HBT Device with fT = 300GHz, fmax 480GHz in 90nm CMOS. (8th September 2020)

• Record Type: Journal Article
• Authors: Manger, Dirk; Boeck, Josef; Aufinger, Klaus; Boguth, Sabine; Gruenberger, Robert; Popp, Thomas; Binder, Boris; Hengst, Claudia; Majied, Soran; Markert, Matthias; Pribil, Andreas; Rothenhaeusser, Steffen; Tschumakow, Dmitri Alex; Dahl, Claus; Bever, Thomas
• Is Part Of: ECS transactions. Volume 98:Number 5(2020)
• Page Start: 101
• Page End: 110
• Publication Date: 2020-09-08
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/09805.0101ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : In this contribution we report the successful integration of a SiGe HBT module with fT = 300GHz, fmax = 480GHz in a 90nm BiCMOS technology platform. Building on previous studies by IHP and Infineon the Epitaxial-Base-Link process flow was further adapted for compatibility to the 90nm CMOS base technology.