(Invited) Characterization of Interfacial Dipoles at Dielectric Stacks by XPS Analysis. (16th August 2017)

• Record Type: Journal Article
• Authors: Miyazaki, Seiichi; Ohta, Akio; Fujimura, Nobuyuki
• Is Part Of: ECS transactions. Volume 80:Number 1(2017)
• Page Start: 229
• Page End: 235
• Publication Date: 2017-08-16
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/08001.0229ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : Potential changes due to electrical dipoles at interfaces between SiO2 and high-k dielectrics such as HfO2, Al2 O3 and Y2 O3 have been directly evaluated from the changes in the cut-off energy of photoelectrons with depositions of ultrathin high-k dielectrics on SiO2 . And also the differences in atomic density near the SiO2 /high-k interfaces have quantified from the analyses of core-line spectra. As a result, the oxygen density ratio near the high-k dielectric/SiO2 interface is likely involved with the interfacial dipole moments.