Cite
HARVARD Citation
Imabayashi, H. et al. (2023). Characterization of peripheries of n-GaN Schottky contacts using scanning internal photoemission microscopy. Japanese journal of applied physics. p. . [Online].
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Imabayashi, H. et al. (2023). Characterization of peripheries of n-GaN Schottky contacts using scanning internal photoemission microscopy. Japanese journal of applied physics. p. . [Online].