Robust approach towards wearable power efficient transistors with low subthreshold swing. (January 2023)

• Record Type: Journal Article
• Authors: Elahi, Ehsan; Suleman, Muhammad; Nisar, Sobia; Sharma, Pradeep Raj; Iqbal, Muhammad Waqas; Patil, Supriya A.; Kim, Honggyun; Abbas, Sohail; Chavan, Vijay D.; Dastgeer, Ghulam; Aziz, Jamal
• Is Part Of: Materials today physics. Volume 30(2023)
• Publication Date: 2023-01
• Subjects: Transition metal dichalcogenides (TMDCs) -- Subthreshold swing (SS) -- Threshold-switching (TS) -- Resistive switching -- Impact-ionization MOS (I-MOS) -- Steep slope transistor (SST); Materials science -- Periodicals; Physics -- Periodicals; Electronic journals; 530.41
• DOI: 10.1016/j.mtphys.2022.100943
• Languages: English
• ISSNs: 2542-5293

Abstract

Abstract: For emerging wearable chip-based electronics, power loss is a critical concern for micro-nano electronic circuits due to high subthreshold swing (SS) value of 60 mV dec −1 for the conventional transistors. In this review article, a variety of steep slope transistor (SST) architectures based on 2-dimensional (2-D) materials, transition material oxides (TMO) and organic materials for ultra-low SS value and low power consumption are elaborated. Firstly, we have reviewed 2-D materials and their heterostructures for SST applications. The minimum SS value extrapolated from the 2-D materials was 0.25 mV/dec based on avalanche breakdown using InSe/BP heterostructures. Various TMO materials are also explored to optimize the SS value and a minimum SS value of 0.74 mV/dec was recorded for threshold switching devices based on NbO2 . Based on organic materials, flexible cellulose memristors reports record low SS value of <0.24 mV/dec with record low turn-ON voltage thus setting the evolutionary standard for future wearable electronics. Moreover, an overview of memtransistors based on 2-D materials and TMO materials is presented to explore the prominence of neuromorphic devices. The spike-driven switching characteristics, short-term to long-term evolution of the resistance state mimics the efficient learning process in biological synapses. Finally, we have explored the difficulties encountered during the designing of different SST architectures for its industrial applications and future technologies. These explored ideas offer new approaches for developing improved wearable devices with effective carrier manipulation for applications in micro and nanoelectronics. Graphical abstract: Image 1 Highlights: Subthreshold swing (SS) value via integrating atomic threshold switching devices. Variety of SST architectures based on 2-dimensional (2-D) materials. SS value of 0.25 mV/dec was exposed using 2D materials. SS value of 0.74 mV/dec explored using semiconductor oxide materials. SS value (<0.24 mV/dec) was highlighted using CNC memristors stack with MOSFET.