Defect induced anti-thermal quenching of Cr3+ doped Zn1-xLi2xGa2O4 for plant growth LED. Issue 4 (15th February 2023)

• Record Type: Journal Article
• Authors: Lu, Jiachen; Liu, Shuo; Chen, Wen; Chen, Xinhe; Zhu, Yi; Chen, Pengyu; Chen, Zhuo; Qian, Xu; Wei, Bo; Liu, Quan
• Is Part Of: Ceramics international. Volume 49:Issue 4(2023)
• Page Start: 5834
• Page End: 5841
• Publication Date: 2023-02-15
• Subjects: Defect modulation -- Thermal stability -- Deep red phosphor -- Zn1-xLi2xGa2O4:Cr3+ -- Plant growth LED; Ceramics -- Periodicals; Céramique industrielle -- Périodiques; Ceramics; Periodicals; Electronic journals; 666
• DOI: 10.1016/j.ceramint.2022.10.117
• Languages: English
• ISSNs: 0272-8842

Abstract

Abstract: Thermal stability improvement of the phosphors is significant to obtain high-efficiency and thermally stable emission in high power light emitting diodes (LEDs). Herein, an anti-thermal quenching deep-red phosphor (Zn, Li)Ga2 O4 :Cr 3+ for plant growth LED is reported. The defects were introduced into ZnGa2 O4 by doping with Li + ions with different valence state and the compounds Zn1- x Li2 x Ga2 O4 :Cr 3+ were prepared. Optimized Zn0.9 Li0.2 Ga2 O4 :Cr 3+ presents anti-thermal quenching and the emission from 580 to 680 nm increases as the temperature evaluates. The enhanced emission at around 630 nm is attributed to the increased defect V Zn, at high temperature while the improved emission at around 670 nm arises from the new octahedral site for Cr 3+ . Both the emission of the optimized Zn0.9 Li0.2 Ga2 O4 :Cr 3+ phosphor at room temperature and high temperature match well with the absorption spectra of the phytochrome PR and PFR . This simple strategy to introduce defects and obtain highly efficient and thermally stable emission provides a novel method to improve the thermal stability of the phosphors for high-power plant growth LEDs.