Spin injection, relaxation, and manipulation in GaN-based semiconductors. Issue 1 (31st December 2023)

• Record Type: Journal Article
• Authors: Sun, Zhenhao; Tang, Ning; Zhang, Shixiong; Chen, Shuaiyu; Liu, Xingchen; Shen, Bo
• Is Part Of: Advances in physics: X. Volume 8:Issue 1(2023)
• Publication Date: 2023-12-31
• Subjects: GaN -- spin-orbit coupling -- spin injection -- spin relaxation -- spin manipulation; Physics -- Periodicals; 530.05
• DOI: 10.1080/23746149.2022.2158757
• Languages: English
• ISSNs: 2374-6149

Abstract

ABSTRACT: GaN-based semiconductors are deemed to be a potential candidate for developing spintronic devices owing to the artificially controllable spin-orbit coupling and the high Curie temperature of GaN-based diluted magnetic semiconductors. Spin injection, spin relaxation dynamics, and spin manipulation are the key issues in the development of GaN-based spintronic devices, which have been reviewed in this article. In the end, a brief section presents the research progress of GaN-based spintronic devices. Graphical Abstract: uf0001