Optimal design of kelvin source SiC MOSFET based PFC considering inductor parasitic capacitance and source mutual inductance. (November 2022)

• Record Type: Journal Article
• Authors: Qin, Haihong; Liu, Xiang; Han, Xiang; Xie, Sixuan; Xu, Baigen; Zhu, Ziyue
• Is Part Of: Energy reports. Volume 8(2022)Supplement 15
• Page Start: 959
• Page End: 969
• Publication Date: 2022-11
• Subjects: Kelvin source siC MOSFET -- PFC optimal design -- Inductor parasitic capacitance -- Source mutual inductance; Power resources -- Periodicals; Energy industries -- Periodicals; Power resources; Periodicals; Electronic journals; 621.04205
• DOI: 10.1016/j.egyr.2022.10.163
• Languages: English
• ISSNs: 2352-4847

Abstract

Abstract: SiC MOSFET with Kelvin source has the advantage of high switching speed due to the lack of common source parasitic inductance. However, the high switching speed will make the parasitic parameters affect the performance of PFC converter obviously. Thus, it is necessary to analyze the influence of parasitic parameters on PFC circuits. The input PF model and switching energy loss model are established considering the inductor parasitic capacitance, and the influence of inductor parasitic capacitance on input PF and switching energy loss is analyzed. The switching energy loss model was established considering source mutual inductance, and the influence of source mutual inductance on switching energy loss was analyzed. Then we obtained the optimum value range of inductor parasitic capacitance and Kelvin source mutual inductance. The simulation and experimental results are given to verify the correctness of the mathematical model and analysis.