High‐Performance Nanostructured Flexible Capacitor by Plasma‐Induced Low‐Temperature Atomic Layer Annealing. Issue 1 (10th October 2022)

• Record Type: Journal Article
• Authors: Lee, Jaehyeong; Go, Dohyun; Lee, Useung; Lee, Seunghyeon; Kim, Keun Hoi; Shin, Jeong Woo; Kim, Hyein; Ok, Jong G.; An, Jihwan
• Is Part Of: Advanced materials technologies. Volume 8:Issue 1(2023)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2022-10-10
• Subjects: atomic layer annealing -- dynamic nanoinscribing -- flexible capacitors -- in situ crystallization -- plasma‐enhanced atomic layer deposition -- thin film capacitors; Materials science -- Periodicals; Technological innovations -- Periodicals; Materials science; Technological innovations; Periodicals; 620.1105
• DOI: 10.1002/admt.202201134
• Languages: English
• ISSNs: 2365-709X

Abstract

Abstract: Fabricating high‐quality thin films on a 3D structured polymer substrate is crucial in realizing high‐performance flexible electronics. Herein, simple yet effective twofold strategies are demonstrated to directly fabricate flexible thin film capacitors on polymer substrate: the crystallization of high‐ k TiO2 film by plasma‐assisted atomic layer annealing at low temperature (80 °C) on nanostructured polycarbonate (PC) substrates fabricated by simple dynamic nanoinscribing (DNI) technique. Plasma‐induced amorphous‐to‐anatase phase transformation occurs in PEALD TiO2 /ZrO2 bilayer thin films, resulting in the capacitance density increase by 30%. The DNI patterning of PC substrates in two directions further increases the surface area by 35% and the capacitance density by 37%, leading to the flexible capacitor of a record‐high capacitance density (24.2 nF mm −2 ) with mechanical stability. Abstract : Simple yet effective twofold strategies are demonstrated to directly fabricate flexible thin film capacitors on polymer: the crystallization of high‐ k TiO2 film by plasma‐assisted atomic layer annealing at low temperature (80 °C) on nanostructured polycarbonate substrates fabricated by dynamic nanoinscribing technique. Combined effects result in the flexible capacitor of a record‐high capacitance density of 24.2 nF mm −2 with mechanical stability.