Development of Silicon and Carbon Based p-Type Amorphous Semiconductor Films with Optical Gap Variable for High-Efficiency Multi-Junction Solar Cells. (25th August 2016)

• Record Type: Journal Article
• Authors: Naragino, Hiroshi; Nagata, Yoshiya; Okafuji, Keigo; Ohtomo, Shinpei; Shimizu, Yuta; Honda, Kensuke
• Is Part Of: ECS transactions. Volume 75:Number 13(2016)
• Page Start: 153
• Page End: 159
• Publication Date: 2016-08-25
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/07513.0153ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : P-type boron-doped amorphous silicon and carbon alloy (B-doped a-Six C1-x ) thin films with wide optical gap selective from 1.80 to 2.50 eV were successfully deposited by radio frequency (r.f.) plasma-enhanced chemical vapor deposition (CVD) method using a mixed solution of tetramethylsilane (TMS) and trimethylborate (TMOB) as a liquid source. Optical gaps of the B-doped a-Six C1-x films could be controlled by changing Si/(C + Si) ratio of the film. From photo-electrochemical measurement under UV illumination, it was clarified that the B-doped a-Six C1-x film with an optical gap of 2.50 eV has the p-type semiconducting property and photoelectric conversion function with a quantum yield of 1.63 %. The rectifying action of a p-n heterojunction comprising p-type B-doped a-Six C1-x film and n-type Si (100) substrate was observed. The open circuit voltage (VOC ) and short circuit current density (JSC ) of the heterojunction were estimated to be 200 mV and 45 mA/cm 2, respectively. The results indicate that p-type B-doped a-Six C1-x films with controllable optical gaps is a promising p-layer material for multi-junction solar cells.