Design and preliminary results of a shunt voltage regulator for a HV-CMOS sensor in a 150 nm process. (1st January 2023)

• Record Type: Journal Article
• Authors: Powell, S.; Hammerich, J.; Karim, N.; Vilella, E.; Zhang, C.
• Is Part Of: Journal of instrumentation. Volume 18:Number 1(2023)
• Publication Date: 2023-01-01
• Subjects: Particle tracking detectors -- Radiation-hard detectors -- Solid state detectors; Scientific apparatus and instruments -- Periodicals; 502.84
• DOI: 10.1088/1748-0221/18/01/C01009
• Languages: English
• ISSNs: 1748-0221

Abstract

Abstract: This paper presents the design and preliminary results of a shunt voltage regulator and two different bandgap reference designs for use with a monolithic High Voltage CMOS (HV-CMOS) sensor in a 150 nm technology node. One bandgap reference design is based on Bipolar Junction Transistors (BJTs) as the reference element of the circuit — the rest of the circuit is entirely designed with Metal–Oxide–Semiconductor Field-Effect Transistors (MOSFETs). The second bandgap reference design makes use of MOSFETs exclusively.