Diameter‐Selective Density Enhancement of Horizontally Aligned Single‐Walled Carbon Nanotube Arrays by Temperature‐Mediated Method. (10th October 2022)

• Record Type: Journal Article
• Authors: Zhang, Hongjie; Zhuge, Wenhuai; Yang, Feng; Kang, Lixing; Zhang, Shuchen; Du, Ran; Qian, Jinjie; Yang, Zhi; Yao, Yagang; Li, Pan; Hu, Yue; Zhang, Jin
• Is Part Of: Advanced functional materials. Volume 32:Number 52(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2022-10-10
• Subjects: devices -- diameter selectivities -- high densities -- single‐walled carbon nanotubes -- temperature‐mediated methods; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.202209391
• Languages: English
• ISSNs: 1616-301X

Abstract

Abstract: High‐density single‐walled carbon nanotube (SWNT) arrays with specific diameters are pursued as potential building blocks in future nanoelectronic devices. The direct growth of SWNT arrays on the single‐crystal substrate has proved offering densely packing high‐quality SWNTs. However, further increase of SWNT density is limited by the deactivation of the catalyst nanoparticles during chemical vapor deposition process. Moreover, an increase of array density without any structure control of SWNTs would make the benefit effect very limited. Here, a temperature‐mediated method is proposed to achieve a high‐density SWNT array with a specific diameter via continual growth of SWNTs after reactivating poisoned catalysts with high carbon capacity and appropriate size. The density of obtained SWNT array on the quartz substrate is increased by more than three times, with diameter distribution controlled ≈2 nm. This approach paves the way for the integration of SWNTs into nanodevices. Abstract : Herein, a temperature‐mediated method is developed to obtain single‐walled carbon nanotube (SWNT) arrays with high density and diameter selectivity. By engineering the metal‐carbon relation at different temperatures, poisoned catalysts is reactivated to regrow SWNTs. As a result, the high‐density arrays and selectively enrich SWNTs with a diameter ≈2 nm are realized, which offer an ideal platform in nanodevices.