Revealing Resistive Switching Mechanism in CaFeOx Perovskite System with Electroforming‐Free and Reset Voltage‐Controlled Multilevel Resistance Characteristics. Issue 51 (3rd November 2022)

• Record Type: Journal Article
• Authors: Lo, Hung‐Yang; Huang, Chun‐Wei; Chiu, Chun‐Chien; Chen, Jui‐Yuan; Shen, Fang‐Chun; Wang, Che‐Hung; Chen, Yen‐Jung; Wang, Chien‐Hua; Yang, Jan‐Chi; Wu, Wen‐Wei
• Is Part Of: Small. Volume 18:Issue 51(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2022-11-03
• Subjects: atomic‐scale annular dark‐field scanning transmission electron microscopy (ADF‐STEM) -- electroforming‐free -- multilevel resistance -- perovskite oxide system -- random‐access memory (RRAM); Nanotechnology -- Periodicals; Nanoparticles -- Periodicals; Microtechnology -- Periodicals; 620.5
• DOI: 10.1002/smll.202205306
• Languages: English
• ISSNs: 1613-6810

Abstract

Abstract: Recently, perovskite (PV) oxides with ABO3 structures have attracted considerable interest from scientists owing to their functionality. In this study, CaFeOx is introduced to reveal the resistive switching properties and mechanism of oxygen vacancy transition in PV and brownmillerite (BM) structures. BM‐CaFeO2.5 is grown on an Nb‐STO conductive substrate epitaxially. CaFeOx exhibits excellent endurance and reliability. In addition, the CaFeOx also demonstrates an electroforming‐free characteristic and multilevel resistance properties. To construct the switching mechanism, high‐resolution transmission electron microscopy is used to observe the topotactic phase change in CaFeOx . In addition, scanning TEM and electron energy loss spectroscopy show the structural evolution and valence state variation of CaFeOx after the switching behavior. This study not only reveals the switching mechanism of CaFeOx, but also provides a PV oxide option for the dielectric material in resistive random‐access memory (RRAM) devices. Abstract : A complex oxide CaFeOx (CFO) is introduced as the dielectric layer in resistive random‐access memory (RRAM), demonstrating excellent RRAM properties, such as electroforming‐free and multilevel data storage. This study provides not only the switching mechanism of the CFO RRAM devices, but also the novel aspect for the RRAM dielectric materials.