Influence of sputtered AlN buffer on GaN epilayer grown by MOCVD. (29th December 2022)

• Record Type: Journal Article
• Authors: Liang, Zhiwen; Yuan, Ye; Wang, Pengwei; Kang, JunJie; Wang, Qi; Zhang, Guoyi
• Is Part Of: Journal of physics. Volume 56:Number 3(2023)
• Publication Date: 2022-12-29
• Subjects: III-nitrides -- epitaxy growth -- MOCVD -- dislocation -- GaN -- surface states; Physics -- Periodicals; 530
• DOI: 10.1088/1361-6463/aca106
• Languages: English
• ISSNs: 0022-3727

Abstract

Abstract: The ex situ sputtered AlN buffer and GaN epilayer grown on top of it by metalorganic chemical vapor deposition were studied comprehensively by a variety of techniques including atomic force microscope, high resolution x-ray diffraction, Raman and x-ray photoelectron spectroscopy characterizations. It exhibited that the AlN buffer deposited by using sputtering technique could be oxidized with exposure in atmosphere. Such oxidation phenomenon significantly influences the characteristics of GaN epilayer, for example leading to poor surface morphology, high dislocation density, and large compressive stress. This study demonstrated the effect of oxygen impurities on GaN growth and has an important guiding significance for the growth of high-quality III-nitride related materials.