Cover Image. Issue 11 (20th November 2022)

• Record Type: Journal Article
• Authors: Park, Sangyong; Oh, Seyong; Lee, Dongyoung; Park, Jin‐Hong
• Is Part Of: InfoMat. Volume 4:Issue 11(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2022-11-20
• Subjects: Materials -- Periodicals; Information technology -- Periodicals; Smart materials -- Periodicals; 620.11
• DOI: 10.1002/inf2.12383
• Languages: English
• ISSNs: 2567-3165

Abstract

Abstract: Ferro‐Floating Memory (FFM) which operates in dual‐mode mechanisms (ferroelectric switching of FeFET and charge injection of Floating gate memory) was implemented by employing a‐In2Se3 as a floating gate. The dual‐mode operation allowed the multiple stages of conductance and improved the linearity and dynamic range of conductance. On the cover, the authors illustrate the dual‐mode operation of the FFM by combining FeFET and Flash memory. (DOI : 10.1002/inf2.12367 ) Abstract : Ferro‐Floating Memory (FFM) which operates in dual‐mode mechanisms (ferroelectric switching of FeFET and charge injection of Floating gate memory) was implemented by employing a‐In2Se3 as a floating gate. The dual‐mode operation allowed the multiple stages of conductance and improved the linearity and dynamic range of conductance. On the cover, the authors illustrate the dual‐mode operation of the FFM by combining FeFET and Flash memory. (DOI : 10.1002/inf2.12367 )