Cite
HARVARD Citation
Li, Z. et al. (2023). Accurate analytical models of hot carrier degradation in nMOSFET and nFinFET considering saturation effect. Semiconductor science and technology. p. . [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Li, Z. et al. (2023). Accurate analytical models of hot carrier degradation in nMOSFET and nFinFET considering saturation effect. Semiconductor science and technology. p. . [Online].