Strain engineering of graphene on rigid substrates. Issue 23 (24th October 2022)

• Record Type: Journal Article
• Authors: Zhang, Yang; Jin, Yanhan; Liu, Jinglan; Ren, Qiancheng; Chen, Zhengyang; Zhao, Yi; Zhao, Pei
• Is Part Of: Nanoscale advances. Volume 4:Issue 23(2022)
• Page Start: 5056
• Page End: 5061
• Publication Date: 2022-10-24
• Subjects: 620.5
• DOI: 10.1039/d2na00580h
• Languages: English
• ISSNs: 2516-0230

Abstract

Abstract : A novel technique for high-quality strain engineering of monolayer graphene on the SiO2 /Si substrate with a maximum strain of 1.5% is achieved. Abstract : Graphene with a large tensile strain is a promising candidate for the new "straintronics'' applications. The current approaches of strain engineering on graphene are mainly realized by flexible or hollow substrates. In this work, a novel method for strained graphene on a rigid substrate assisted by PDMS stretching and interface adjustments is proposed. The Raman spectra show that the maximum strain of graphene on the SiO2 /Si substrate is ∼1.5%, and multiple characterizations demonstrate its high cleanness, flatness, integrity, and reliable electrical performance. The successful strain engineering is attributed to the protection of a layer of formvar resin and the interfacial capillary force of the buffering liquid. We believe this technique can advance strain-related fundamental studies and applications of two-dimensional materials.