A Comparative Study between Negative & Positive Bias Temperature Instability of Commercial nano-MOSFETs Using Voltage Step Stress Technique. Issue 1 (1st December 2022)

• Record Type: Journal Article
• Authors: Li, Zhigang; Wei, Qinru; Gao, Rui; Lin, Xiaoling; Huang, Yun
• Is Part Of: Journal of physics. Volume 2395 Issue 1(2022)
• Publication Date: 2022-12-01
• Subjects: Physics -- Congresses; 530.5
• DOI: 10.1088/1742-6596/2395/1/012007
• Languages: English
• ISSNs: 1742-6588

Abstract

Abstract: Bias temperature instability (BTI) has been one of the most common and also severe aging mechanisms in MOSFETs. In this work, a comparative study between NBTI and PBTI of commercial nano-MOSFETs has been conducted using the voltage step stress (VSS) technique, which is implemented by applying multiple constant voltage stress (CVS) continuously on a single device. Aging parameters are extracted for both NBTI and PBTI from a single device using the VSS technique, and the lifetime under room temperature is predicted. This work is of potential use for BTI investigation of commercial nano-MOSFETs in terms of both test efficiency and affordability.