Construction of a High‐Quality Organic‐Inorganic Hybrid Heterostructure and Its Photo‐response Performance. Issue 1 (23rd November 2022)

• Record Type: Journal Article
• Authors: Zhang, Yadan; Yu, Guanghua; Xue, Di; Lu, Jie; Meng, Xing; Yin, Yao; Wang, Qi; Wang, Zi; Huang, Lizhen; Chi, Lifeng
• Is Part Of: Chinese journal of chemistry. Volume 41:Issue 1(2023)
• Page Start: 50
• Page End: 56
• Publication Date: 2022-11-23
• Subjects: Sol‐gel process -- Thin films -- Semiconductors -- Phthalocyanines -- Hybrid heterostructure; Chemistry -- Periodicals; 540.5
• DOI: 10.1002/cjoc.202200447
• Languages: English
• ISSNs: 1001-604X

Abstract

Comprehensive Summary: The combination of metal oxide and organic semiconductor for constructing organic–inorganic hybrid heterostructure is promising to offer unique optoelectronic properties. However, the distinct difference in electron structure and processing technology of the two types of materials makes it usually difficult to fully deliver their complementary advantages. Herein, we report the construction of a high quality organic/In2 O3 hybrid heterostructure presenting a good ambipolar transport with average electron mobility >1 cm 2 ·V –1 ·s –1 and hole mobility up to 0.4 cm 2 ·V –1 ·s –1, respectively, together with a high‐gain inverter. In addition, the incorporation with organic film on top of In2 O3 remarkably reduces the dark current, enabling the realization of high photoconductivity response with photosensitivity of two magnitudes higher than that of pure In2 O3 . The photoconductor and phototransistor of the hybrid structure demonstrate high photoresponsivity >10 3 AW –1 and detectivity up to 10 14 Jones, demonstrating the promising functionality of such a high quality hybrid heterostructure. Abstract : By using sol‐gel produced In2 O3 films and vacuum deposited phthalocyanines, we construct a high‐quality organic–inorganic hybrid heterostructure with efficient ambipolar transport behavior and demonstrate its excellent UV‐light photoresponse performance.