Highly stable self-passivated MoO3-doped graphene film with nonvolatile MoOx layer. (December 2022)

• Record Type: Journal Article
• Authors: Shin, Somyeong; Kim, Seonyeong; Song, Hyeon-Kyo; Kim, Hansung; Kim, Taekwang; Du, Hyewon; Kang, Dain; Hwang, Jun Yeon; Woo, Yun Sung; Seo, Sunae
• Is Part Of: Materials today communications. Volume 33(2022)
• Publication Date: 2022-12
• Subjects: Graphene -- MoO3 doping -- Oxygen deficient MoOx -- Passivation layer -- Doping stability; Materials science -- Periodicals; 620.11
• DOI: 10.1016/j.mtcomm.2022.104432
• Languages: English
• ISSNs: 2352-4928

Abstract

Abstract: The realization of high-performance graphene-based electronics, including transparent electrodes, flexible devices, and energy storage, is often hindered by the lack of adequate doping, which provides a stable and low sheet resistance. In this study, we demonstrate a highly stable MoO3 -doped graphene obtained simply through a self-passivation. Graphene deposited with a 5-nm-thick MoO3 exhibited a significant decrease in sheet resistance upon annealing at 400 °C under a hydrogen atmosphere. Surface and structural analyses confirmed that MoO3 was converted to MoO x by thermal annealing, which consisted of mainly crystalline MoO3 and Mo4 O11 with coexisting MoO2 . A field-effect transistor fabricated using the MoO x -doped graphene exhibited a p-type characteristic similar to that of the MoO3 -doped graphene. However, unlike the MoO3 -doped graphene severely degraded by environment, the MoO x -doped graphene exhibited stable electrical properties after air exposure and chemical immersion owing to the chemically inert Mo4 O11 and MoO2 acting as passivation layers while maintaining the p-type doping by MoO3 . Thus, we expect that the highly stable MoO x -doped graphene obtained via the simple method will facilitate the fabrication and contribute to the performance reliability of various graphene-based electronic devices. Graphical Abstract: ga1 Highlights: Highly stable MoO3 -doped graphene through self-passivation by oxygen deficient MoOx. Simple way of thermal annealing for the synthesis of oxygen deficient MoOx -doped graphene. MoOx -doped graphene with p-type semiconducting characteristics. Excellent stability and chemical durability of MoOx -doped graphene.