Modulating self-biased near-UV photodetection of Gd-doped bismuth ferrite ceramics by introducing zinc oxide as electron transport layer. Issue 2 (15th January 2023)

• Record Type: Journal Article
• Authors: Mana-ay, Haidee; Zhang, Shao-Yu; Chen, Cheng-Sao; Tu, Chi-Shun; Chen, Pin-Yi
• Is Part Of: Ceramics international. Volume 49:Issue 2(2023)
• Page Start: 1646
• Page End: 1656
• Publication Date: 2023-01-15
• Subjects: BiFeO3 -- Zinc oxide -- Electron transport layer -- Photoresponsivity -- Interfacial engineering; Ceramics -- Periodicals; Céramique industrielle -- Périodiques; Ceramics; Periodicals; Electronic journals; 666
• DOI: 10.1016/j.ceramint.2022.09.127
• Languages: English
• ISSNs: 0272-8842

Abstract

Abstract: ZnO semiconductor offers many advantages as an electron transport layer (ETL) in photovoltaic-based devices, including high charge carrier mobility and hole-blocking ability. In this work, ZnO thin film is introduced as an ETL between (Bi0.93 Gd0.07 )FeO3 (BFO7Gd) ferroelectric and ITO thin film to form ITO/ZnO/BFO7Gd/Au heterostructure. The device with the ETL exhibited a superior photoresponsivity than the one without ETL, reaching ∼32% enhancement. Furthermore, a subsequent E -field poling on the ITO/ZnO/BFO7Gd/Au heterostructure resulted in an additional ∼25% increase in photoresponsivity. The enhancement is mainly attributed to two factors: (1) high electron mobility and lower recombination rate resulting from the introduction of ZnO ETL, and (2) efficient charge separation facilitated by the polarization-driven internal E field that superimposes with the interfacial built-in E fields. The introduction of ZnO ETL and the utilization of the ferroelectric polarization prove to be an alternative route to further modulate the photosensing performance of BiFeO3 -based near-UV photodetectors.