Approaching the Intrinsic Threshold Breakdown Voltage and Ultrahigh Gain in a Graphite/InSe Schottky Photodetector. Issue 47 (17th October 2022)
- Record Type:
- Journal Article
- Title:
- Approaching the Intrinsic Threshold Breakdown Voltage and Ultrahigh Gain in a Graphite/InSe Schottky Photodetector. Issue 47 (17th October 2022)
- Main Title:
- Approaching the Intrinsic Threshold Breakdown Voltage and Ultrahigh Gain in a Graphite/InSe Schottky Photodetector
- Authors:
- Zhang, Zhiyi
Cheng, Bin
Lim, Jeremy
Gao, Anyuan
Lyu, Lingyuan
Cao, Tianjun
Wang, Shuang
Li, Zhu‐An
Wu, Qingyun
Ang, Lay Kee
Ang, Yee Sin
Liang, Shi‐Jun
Miao, Feng - Abstract:
- Abstract: Realizing both ultralow breakdown voltage and ultrahigh gain is one of the major challenges in the development of high‐performance avalanche photodetector. Here, it is reported that an ultrahigh avalanche gain of 3 × 10 5 can be realized in the graphite/InSe Schottky photodetector at a breakdown voltage down to 5.5 V. Remarkably, the threshold breakdown voltage can be further reduced down to 1.8 V by raising the operating temperature, approaching the theoretical limit of 1.5 E g \[{{\cal E}_{\bf g}}\] / e, with E g ${{\cal E}_{\bf g}}$ the bandgap of semiconductor. A 2D impact ionization model is developed and it is uncovered that observation of high gain at low breakdown voltage arises from reduced dimensionality of electron–phonon scattering in the layered InSe flake. These findings open up a promising avenue for developing novel weak‐light detectors with low energy consumption and high sensitivity. Abstract : Intrinsic threshold breakdown voltage with an ultrahigh gain is observed in an avalanche photodetector (APD) based on a graphite/InSe Schottky junction, which is attributed to the high ionization rate due to the reduced dimensionality of electron–phonon scattering in layered InSe. This work opens up a new avenue for future APDs with both low energy consumption and high sensitivity.
- Is Part Of:
- Advanced materials. Volume 34:Issue 47(2022)
- Journal:
- Advanced materials
- Issue:
- Volume 34:Issue 47(2022)
- Issue Display:
- Volume 34, Issue 47 (2022)
- Year:
- 2022
- Volume:
- 34
- Issue:
- 47
- Issue Sort Value:
- 2022-0034-0047-0000
- Page Start:
- n/a
- Page End:
- n/a
- Publication Date:
- 2022-10-17
- Subjects:
- avalanche photodiodes -- InSe -- layered materials -- van der Waals (vdW) Schottky junctions
Materials -- Periodicals
Chemical vapor deposition -- Periodicals
620.11 - Journal URLs:
- http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1521-4095 ↗
http://onlinelibrary.wiley.com/ ↗ - DOI:
- 10.1002/adma.202206196 ↗
- Languages:
- English
- ISSNs:
- 0935-9648
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 0696.897800
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 24618.xml