Cite
HARVARD Citation
Kim, T. et al. (2022). Ambipolar Nonvolatile Memory Behavior and Reversible Type‐Conversion in MoSe2/MoSe2 Transistors with Modified Stack Interface. Advanced functional materials. p. n/a. [Online].
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Kim, T. et al. (2022). Ambipolar Nonvolatile Memory Behavior and Reversible Type‐Conversion in MoSe2/MoSe2 Transistors with Modified Stack Interface. Advanced functional materials. p. n/a. [Online].