Bottom‐Up Synthesized Nanoporous Graphene Transistors. (21st August 2021)
- Record Type:
- Journal Article
- Title:
- Bottom‐Up Synthesized Nanoporous Graphene Transistors. (21st August 2021)
- Main Title:
- Bottom‐Up Synthesized Nanoporous Graphene Transistors
- Authors:
- Mutlu, Zafer
Jacobse, Peter H.
McCurdy, Ryan D.
Llinas, Juan P.
Lin, Yuxuan
Veber, Gregory C.
Fischer, Felix R.
Crommie, Michael F.
Bokor, Jeffrey - Abstract:
- Abstract: Nanoporous graphene (NPG) can exhibit a uniform electronic band gap and rationally‐engineered emergent electronic properties, promising for electronic devices such as field‐effect transistors (FETs), when synthesized with atomic precision. Bottom‐up, on‐surface synthetic approaches developed for graphene nanoribbons (GNRs) now provide the necessary atomic precision in NPG formation to access these desirable properties. However, the potential of bottom‐up synthesized NPG for electronic devices has remained largely unexplored to date. Here, FETs based on bottom‐up synthesized chevron‐type NPG (C‐NPG), consisting of ordered arrays of nanopores defined by laterally connected chevron GNRs, are demonstrated. C‐NPG FETs show excellent switching performance with on–off ratios exceeding 10 4, which are tightly linked to the structural quality of C‐NPG. The devices operate as p‐type transistors in the air, while n‐type transport is observed when measured under vacuum, which is associated with reversible adsorption of gases or moisture. Theoretical analysis of charge transport in C‐NPG is also performed through electronic structure and transport calculations, which reveal strong conductance anisotropy effects in C‐NPG. The present study provides important insights into the design of high‐performance graphene‐based electronic devices where ballistic conductance and conduction anisotropy are achieved, which could be used in logic applications, and ultra‐sensitive sensors forAbstract: Nanoporous graphene (NPG) can exhibit a uniform electronic band gap and rationally‐engineered emergent electronic properties, promising for electronic devices such as field‐effect transistors (FETs), when synthesized with atomic precision. Bottom‐up, on‐surface synthetic approaches developed for graphene nanoribbons (GNRs) now provide the necessary atomic precision in NPG formation to access these desirable properties. However, the potential of bottom‐up synthesized NPG for electronic devices has remained largely unexplored to date. Here, FETs based on bottom‐up synthesized chevron‐type NPG (C‐NPG), consisting of ordered arrays of nanopores defined by laterally connected chevron GNRs, are demonstrated. C‐NPG FETs show excellent switching performance with on–off ratios exceeding 10 4, which are tightly linked to the structural quality of C‐NPG. The devices operate as p‐type transistors in the air, while n‐type transport is observed when measured under vacuum, which is associated with reversible adsorption of gases or moisture. Theoretical analysis of charge transport in C‐NPG is also performed through electronic structure and transport calculations, which reveal strong conductance anisotropy effects in C‐NPG. The present study provides important insights into the design of high‐performance graphene‐based electronic devices where ballistic conductance and conduction anisotropy are achieved, which could be used in logic applications, and ultra‐sensitive sensors for chemical or biological detection. Abstract : The charge‐transport properties of bottom‐up synthesized nanoporous graphene are investigated both experimentally and theoretically. The results provide important insights into the design of high‐performance graphene‐based electronic devices. … (more)
- Is Part Of:
- Advanced functional materials. Volume 31:Number 47(2021)
- Journal:
- Advanced functional materials
- Issue:
- Volume 31:Number 47(2021)
- Issue Display:
- Volume 31, Issue 47 (2021)
- Year:
- 2021
- Volume:
- 31
- Issue:
- 47
- Issue Sort Value:
- 2021-0031-0047-0000
- Page Start:
- n/a
- Page End:
- n/a
- Publication Date:
- 2021-08-21
- Subjects:
- bottom‐up on‐surface synthesis -- electronic structure -- field‐effect transistors -- graphene nanoribbons -- nanoelectronics -- nanoporous graphene -- Raman spectroscopy -- transport calculations
Materials -- Periodicals
Chemical vapor deposition -- Periodicals
620.11 - Journal URLs:
- http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1616-3028 ↗
http://onlinelibrary.wiley.com/ ↗ - DOI:
- 10.1002/adfm.202103798 ↗
- Languages:
- English
- ISSNs:
- 1616-301X
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 0696.853900
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 24528.xml