Room Temperature Lasing in GeSn Microdisks Enabled by Strain Engineering. Issue 22 (21st August 2022)

• Record Type: Journal Article
• Authors: Buca, Dan; Bjelajac, Andjelika; Spirito, Davide; Concepción, Omar; Gromovyi, Maksym; Sakat, Emilie; Lafosse, Xavier; Ferlazzo, Laurence; von den Driesch, Nils; Ikonic, Zoran; Grützmacher, Detlev; Capellini, Giovanni; El Kurdi, Moustafa
• Is Part Of: Advanced optical materials. Volume 10:Issue 22(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2022-08-21
• Subjects: GeSn band structure -- GeSnOI -- mid‐infrared laser -- room temperature GeSn laser -- strain engineering; Optical materials -- Periodicals; Photonics -- Periodicals; 620.11295
• DOI: 10.1002/adom.202201024
• Languages: English
• ISSNs: 2195-1071

Abstract

Abstract: The success of GeSn alloys as active material for infrared lasers could pave the way toward a monolithic technology that can be manufactured within mainstream silicon photonics. Nonetheless, for operation on chip, lasing should occur at room temperature or beyond. Unfortunately, despite the intense research in recent years, many hurdles have yet to be overcome. An approach exploiting strain engineering to induce large tensile strain in micro‐disk made of GeSn alloy with Sn content of 14 at% is presented here. This method enables robust multimode laser emission at room temperature. Furthermore, tensile strain enables proper valence band engineering; as a result, over a large range of operating temperatures, lower lasing thresholds are observed compared to high Sn content GeSn lasers operating at similar wavelength. Abstract : The success of GeSn alloys as active material for infrared lasers could pave the way toward a technology that can be manufactured within mainstream silicon photonics. Unfortunately, despite the intense research in recent years, many hurdles have yet to be overcome to reach room temperature operation. An approach exploiting strain engineering to induce large tensile strain in micro‐disk made of GeSn alloy with Sn content of 14 at% is shown.