Cite
HARVARD Citation
Yokoi, T. et al. (2023). Atomic structures of grain boundaries for Si and Ge: A simulated annealing method with artificial-neural-network interatomic potentials. Journal of physics and chemistry of solids. p. . [Online].
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Yokoi, T. et al. (2023). Atomic structures of grain boundaries for Si and Ge: A simulated annealing method with artificial-neural-network interatomic potentials. Journal of physics and chemistry of solids. p. . [Online].