Cite
HARVARD Citation
Feng, S. et al. (2023). An engineered solution to multi-physics of insulated gate bipolar transistor module considering electrical-thermal-mechanical coupling effect. Advances in engineering software. p. . [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Feng, S. et al. (2023). An engineered solution to multi-physics of insulated gate bipolar transistor module considering electrical-thermal-mechanical coupling effect. Advances in engineering software. p. . [Online].