Cite
HARVARD Citation
Gandus, G. et al. (2023). Efficient and accurate defect level modeling in monolayer MoS2 via GW+DFT with open boundary conditions. Solid-state electronics. p. . [Online].
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Gandus, G. et al. (2023). Efficient and accurate defect level modeling in monolayer MoS2 via GW+DFT with open boundary conditions. Solid-state electronics. p. . [Online].