A solvent-compatible filter-transfer method of semi-transparent carbon-nanotube electrodes stacked with silver nanowires. Issue 1 (31st December 2022)

• Record Type: Journal Article
• Authors: Funabe, Mikuto; Satoh, Daiki; Ando, Rin; Daiguji, Hiroaki; Matsui, Jun; Ishizaki, Manabu; Kurihara, Masato
• Is Part Of: Science and technology of advanced materials. Volume 23:Issue 1(2022)
• Page Start: 783
• Page End: 795
• Publication Date: 2022-12-31
• Subjects: Silver nanowire -- carbon nanotube -- solar cell -- filter-transfer method -- semi-transparent electrode; Materials -- Technological innovations -- Periodicals; 620.112
• DOI: 10.1080/14686996.2022.2144092
• Languages: English
• ISSNs: 1468-6996

Abstract

ABSTRACT: Low-density films of single-walled carbon nanotubes (SWNTs) can be used as a semi-transparent top electrode for all-solution-processed film devices; however, their semiconductor characteristics vary depending on the experimental factors in their dispersion into solvents, and the sublayers are damaged as a result of solvent incompatibility. In this study, we report a solvent-compatible filter-transfer method for SWNT films stacked with silver nanowires (AgNWs), and evaluate the semiconductor characteristics through the p/n heterojunction with a Si wafer (SWNT/Si). AgNWs and SWNTs were successively filtered through their aqueous dispersion solutions using a membrane filter. The stacked semi-transparent films (AgNW/SWNT films with controlled densities) were successfully transferred onto glass plates and Si wafers. The transmittance at 550 nm revealed a window between 60% and 80% with a narrow sheet resistance range between 11 and 23 Ω □ −1 . The power conversion efficiency (PCE) of SWNT/Si was improved to 11.2% in a junction area of 0.031 cm 2 through the use of spin-coated Nafion resins; however, the accumulated resistance of SWNTs drastically reduced the PCE to 2% as the area increased to ≥0.5 cm 2 . AgNWs maintained the PCE within a range of 10.7% to 8.6% for an area ranging from 0.031 cm 2 to 1.13 cm 2 . All of the photovoltaic parameters were dependent on the junction areas, suggesting that AgNWs function as an effective current-collector layer on the semiconductor layer of SWNTs without direct contact of AgNWs with the Si surface. In addition, we report a solvent-compatible experiment for transferring AgNW/SWNT films onto a solvent-sensitive perovskite material (CH3 NH3 PbI3 ). GRAPHICAL ABSTRACT: uf0001