GaN quasi-vertical trench MOSFETs grown on Si substrate with ON-current exceeding 1 A. (1st December 2022)

• Record Type: Journal Article
• Authors: Zhu, Renqiang; Jiang, Huaxing; Tang, Chak Wah; Lau, Kei May
• Is Part Of: Applied physics express. Volume 15:Number 12(2022)
• Publication Date: 2022-12-01
• Subjects: GaN -- vertical transistor -- power device; Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.35848/1882-0786/aca26e
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: This work reports GaN quasi-vertical trench MOSFETs grown on 6-inch Si substrates. The device with single-trench design shows a specific ON-resistance of 0.84 mΩ·cm 2, a maximum drain current density of 5.0 kA cm −2, and a breakdown voltage of 320 V, after fine-tuning of the channel doping and employment of a thick bottom dielectric process. The large-area (∼0.54 mm 2 ) GaN-on-Si trench MOSFET with multiple-finger design shows an ON-current of 1.1 A, an ON-resistance of 4.0 Ω and a breakdown voltage of 205 V.