Cite
HARVARD Citation
Shen, P. et al. (2022). A compact circuit-level model for single-event burnout in SiC power MOSFET devices. Japanese journal of applied physics. p. . [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Shen, P. et al. (2022). A compact circuit-level model for single-event burnout in SiC power MOSFET devices. Japanese journal of applied physics. p. . [Online].