Cite
HARVARD Citation
Lu, H. et al. (2023). Quasi-normally off AlGaN/GaN high-electron-mobility transistors with p-type CuOx gate synthesized through magnetron reactive sputtering. Materials science in semiconductor processing. p. . [Online].
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Lu, H. et al. (2023). Quasi-normally off AlGaN/GaN high-electron-mobility transistors with p-type CuOx gate synthesized through magnetron reactive sputtering. Materials science in semiconductor processing. p. . [Online].