Cite
HARVARD Citation
Fang, D. et al. (2022). Split-gate trench metal-oxide-semiconductor field effect transistor with an inverted L-shaped source region. Microelectronics journal. p. . [Online].
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Fang, D. et al. (2022). Split-gate trench metal-oxide-semiconductor field effect transistor with an inverted L-shaped source region. Microelectronics journal. p. . [Online].