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HARVARD Citation
Hao, X. et al. (2023). Atomic-scale insights of the effect of growth temperature on the migration behavior of Al atoms in InGaAs/AlGaAs multiple quantum wells. Materials science in semiconductor processing. p. . [Online].
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Hao, X. et al. (2023). Atomic-scale insights of the effect of growth temperature on the migration behavior of Al atoms in InGaAs/AlGaAs multiple quantum wells. Materials science in semiconductor processing. p. . [Online].